IRF3710 Infineon / IR MOSFET
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Product Details
Brand Name | Infineon / IR | Place of Origin | China | |
Model Number | IRF3710 | Type | Other, MOSFET | |
Package Type | Throught Hole |
Product Description
Factory
IRF3710
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 57 A
Rds On - Drain-Source Resistance: 23 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 200 W
Channel Mode: Enhancement
Brand: Infineon / IR
Configuration: Single
Fall Time: 47 ns
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 58 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 12 ns
Width: 4.4 mm
Unit Weight: 0.068784 oz
factory pack quantity: 50
Contact Us
- Shenzhen Kexinxin Technology Co., Ltd.
- Contact nameAaron Lin Chat Now
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- AddressFutian, Shenzhen, Guangdong
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